High resistive switching current ratio, excellent endurance and stability for bistable non-volatile memristor and photosensing devices based on perovskite/titanium dioxide embedded in polyvinyl alcohol matrix

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-27 DOI:10.1016/j.mssp.2025.109511

Garima Poply , Manisha , Deepak Kumar , Tanmoy Majumder , Tanuj Kumar , Vishal Singh , Jugal Bori , Jehova Jire L. Hmar

{"title":"High resistive switching current ratio, excellent endurance and stability for bistable non-volatile memristor and photosensing devices based on perovskite/titanium dioxide embedded in polyvinyl alcohol matrix","authors":"Garima Poply , Manisha , Deepak Kumar , Tanmoy Majumder , Tanuj Kumar , Vishal Singh , Jugal Bori , Jehova Jire L. Hmar","doi":"10.1016/j.mssp.2025.109511","DOIUrl":null,"url":null,"abstract":"<div><div>This study demonstrates the excellent endurance and stability of a high resistive switching current ratio for bistable non-volatile memristor and photosensing of a fabricated CH3NH3PbBr3-TiO2/PVA/FTO-coated glass substrate. Structural, optical, and electrical properties of fabricated devices TiO2/PVA/FTO-coated glass substrate (D1), CH3NH3PbBr3/PVA/FTO-coated glass substrate (D2), and CH3NH3PbBr3-TiO2/PVA/FTO-coated glass substrate (D3) were examined in detail. The current-voltage (I-V) characteristic of device D3 shows the bistable non-volatile resistive switching memory having an ON/OFF current ratio of ∼107 for over 5000 sweeping cycles. Device D3 exhibited a significantly higher ON/OFF current ratio compared to devices D1 and D2. Additionally, its operating voltage was substantially lower than that of the control samples D1 and D2, making it highly suitable for low-power electronic applications. Moreover, the stability and retention measurements were performed for device D3 in terms of resistance; the ON/OFF resistance ratio was found to be ∼107 at a read voltage of 1V. The device D3 maintained excellent stability even after continuous operation for ∼105 s, with no significant signs of degradation. Hence, the device D3 has good endurance, stability, and a high resistive switching current ratio, which is suitable for rewriteable non-volatile memristors. Furthermore, the photocurrent, photo-detectivity, and photoresponsivity of the same devices D1, D2, and D3 were studied under broadband light illumination with an intensity of 100 mW/cm2. Interestingly, it has been observed that the three devices show a good response of photocurrent at different voltages. The device D3 exhibited superior performance compared to D1 and D2. The values of current density under dark and light of device D3 are found to be ∼1.98 × 10−8 A/cm2 and ∼2.53 × 10−5 A/cm2, respectively, with the corresponding ON/OFF current ratio as ∼1277. This is due to the combination of perovskite CH3NH3PbBr3 and TiO2 and enhanced electron-hole pair generation, resulting in increasing the concentration of the charge carrier. The responsivity and photodetectivity of devices exhibit a similar trend as photocurrent. The maximum values of responsivity and photodetectivity of device D3 have been obtained at 1V and found to be ∼2.52 × 10−2 A/W and ∼3.15 × 1011 Hz1/2/W, respectively. Therefore, this device D3 also has the potential to be used for photosensing devices. Hence, the fabricated device D3 has excellent endurance, stability, high resistive switching current ratio, and photoresponse, which makes it an outstanding candidate for non-volatile memristor and photosensing applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109511"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125002483","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

This study demonstrates the excellent endurance and stability of a high resistive switching current ratio for bistable non-volatile memristor and photosensing of a fabricated CH₃NH₃PbBr₃-TiO₂/PVA/FTO-coated glass substrate. Structural, optical, and electrical properties of fabricated devices TiO₂/PVA/FTO-coated glass substrate (D1), CH₃NH₃PbBr₃/PVA/FTO-coated glass substrate (D2), and CH₃NH₃PbBr₃-TiO₂/PVA/FTO-coated glass substrate (D3) were examined in detail. The current-voltage (I-V) characteristic of device D3 shows the bistable non-volatile resistive switching memory having an ON/OFF current ratio of ∼10⁷ for over 5000 sweeping cycles. Device D3 exhibited a significantly higher ON/OFF current ratio compared to devices D1 and D2. Additionally, its operating voltage was substantially lower than that of the control samples D1 and D2, making it highly suitable for low-power electronic applications. Moreover, the stability and retention measurements were performed for device D3 in terms of resistance; the ON/OFF resistance ratio was found to be ∼10⁷ at a read voltage of 1V. The device D3 maintained excellent stability even after continuous operation for ∼10⁵ s, with no significant signs of degradation. Hence, the device D3 has good endurance, stability, and a high resistive switching current ratio, which is suitable for rewriteable non-volatile memristors. Furthermore, the photocurrent, photo-detectivity, and photoresponsivity of the same devices D1, D2, and D3 were studied under broadband light illumination with an intensity of 100 mW/cm². Interestingly, it has been observed that the three devices show a good response of photocurrent at different voltages. The device D3 exhibited superior performance compared to D1 and D2. The values of current density under dark and light of device D3 are found to be ∼1.98 × 10⁻⁸ A/cm² and ∼2.53 × 10⁻⁵ A/cm², respectively, with the corresponding ON/OFF current ratio as ∼1277. This is due to the combination of perovskite CH₃NH₃PbBr₃ and TiO₂ and enhanced electron-hole pair generation, resulting in increasing the concentration of the charge carrier. The responsivity and photodetectivity of devices exhibit a similar trend as photocurrent. The maximum values of responsivity and photodetectivity of device D3 have been obtained at 1V and found to be ∼2.52 × 10⁻² A/W and ∼3.15 × 10¹¹ Hz^1/2/W, respectively. Therefore, this device D3 also has the potential to be used for photosensing devices. Hence, the fabricated device D3 has excellent endurance, stability, high resistive switching current ratio, and photoresponse, which makes it an outstanding candidate for non-volatile memristor and photosensing applications.

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基于钙钛矿/二氧化钛嵌入聚乙烯醇基体的双稳态非易失性忆阻器和光敏器件具有高电阻开关电流比、优异的耐用性和稳定性

本研究证明了制备的CH3NH3PbBr3-TiO2/PVA/ fto镀膜玻璃基板具有高阻性开关电流比的双稳态非易失性忆阻器和光敏的优异耐用性和稳定性。详细研究了制备的TiO2/PVA/ fto镀膜玻璃基板（D1）、CH3NH3PbBr3/PVA/ fto镀膜玻璃基板（D2）和CH3NH3PbBr3-TiO2/PVA/ fto镀膜玻璃基板（D3）的结构、光学和电学性能。器件D3的电流-电压（I-V）特性显示双稳态非易失性电阻开关存储器在超过5000次扫描循环中具有开/关电流比约107。与D1和D2器件相比，器件D3具有更高的开/关电流比。此外，其工作电压大大低于控制样品D1和D2，使其非常适合于低功耗电子应用。此外，在电阻方面，对器件D3进行了稳定性和保留测量；在读取电压为1V时，发现开/关电阻比为~ 107。即使在连续操作~ 105 s后，器件D3也保持了出色的稳定性，没有明显的退化迹象。因此，该器件D3具有良好的耐用性、稳定性和高阻性开关电流比，适用于可重写非易失性忆阻器。此外，在100 mW/cm2的宽带光照下，研究了相同器件D1、D2和D3的光电流、光探测性和光响应性。有趣的是，这三种器件在不同电压下都表现出良好的光电流响应。与D1和D2相比，器件D3表现出更优越的性能。在黑暗和光照下，器件D3的电流密度值分别为~ 1.98 × 10−8 A/cm2和~ 2.53 × 10−5 A/cm2，对应的ON/OFF电流比为~ 1277。这是由于钙钛矿CH3NH3PbBr3与TiO2结合，增强了电子-空穴对的生成，导致载子浓度增加。器件的响应性和光探测性表现出与光电流相似的趋势。器件D3在1V时的响应率和光探测率的最大值分别为~ 2.52 × 10−2 A/W和~ 3.15 × 1011 Hz1/2/W。因此，该器件D3也具有用于光敏器件的潜力。因此，制备的器件D3具有优异的耐用性、稳定性、高电阻开关电流比和光响应，使其成为非易失性忆阻器和光敏应用的杰出候选者。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.