ESD Human Body Model step stress distributions of GaN HEMTs and the correlation with one level test results

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-26 DOI:10.1016/j.microrel.2025.115699

R.A. van der Berg , E. Jellema

{"title":"ESD Human Body Model step stress distributions of GaN HEMTs and the correlation with one level test results","authors":"R.A. van der Berg , E. Jellema","doi":"10.1016/j.microrel.2025.115699","DOIUrl":null,"url":null,"abstract":"<div><div>Evaluation of the Electro Sensitivity Discharge (ESD) robustness of Radio Frequency (RF) GaN HEMTs can result in different Human Body Model (HBM) ESD classifications due to different sample sizes, batch-to-batch variations, different test methodology and differences in the test set-up. For example, a low sample sizes per voltage level can lead to a higher classification level.</div><div>Two GaN HEMTs processed in the same technology with different power ratings were investigated with (i) step stress testing, and (ii) with testing at one voltage level, using different test set-ups and different wafer and assembly batches. A lognormal distribution gives a good fit for the HBM failure voltages acquired from step stress testing and can quantify the differences between GaN HEMTs, test set-ups and different batches.</div><div>The failure percentages observed with one level testing can be significantly lower than what is expected based on the step stress HBM failure distribution. Furthermore, the spread observed in the HBM failure distributions acquired by testing at one voltage level is significantly larger than the spread observed in the HBM failure distribution as determined by step stress testing.</div><div>The differences between one level and the step stress failure distribution can be explained by presence of traps inside the GaN HEMT devices.</div><div>Furthermore, the ESD classification according to JS-001 [1] is discussed and how Operating Characteristics (OC) curves can be used to compare ESD test plans with different sample sizes and number of failures observed.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115699"},"PeriodicalIF":1.6000,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S002627142500112X","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Evaluation of the Electro Sensitivity Discharge (ESD) robustness of Radio Frequency (RF) GaN HEMTs can result in different Human Body Model (HBM) ESD classifications due to different sample sizes, batch-to-batch variations, different test methodology and differences in the test set-up. For example, a low sample sizes per voltage level can lead to a higher classification level.

Two GaN HEMTs processed in the same technology with different power ratings were investigated with (i) step stress testing, and (ii) with testing at one voltage level, using different test set-ups and different wafer and assembly batches. A lognormal distribution gives a good fit for the HBM failure voltages acquired from step stress testing and can quantify the differences between GaN HEMTs, test set-ups and different batches.

The failure percentages observed with one level testing can be significantly lower than what is expected based on the step stress HBM failure distribution. Furthermore, the spread observed in the HBM failure distributions acquired by testing at one voltage level is significantly larger than the spread observed in the HBM failure distribution as determined by step stress testing.

The differences between one level and the step stress failure distribution can be explained by presence of traps inside the GaN HEMT devices.

Furthermore, the ESD classification according to JS-001 [1] is discussed and how Operating Characteristics (OC) curves can be used to compare ESD test plans with different sample sizes and number of failures observed.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.