Soumya Ranjan Panda , Thomas Zimmer , Anjan Chakravorty , Sebastien Fregonese
{"title":"Recent progress in bipolar and heterojunction bipolar transistors on SOI","authors":"Soumya Ranjan Panda , Thomas Zimmer , Anjan Chakravorty , Sebastien Fregonese","doi":"10.1016/j.sse.2025.109101","DOIUrl":null,"url":null,"abstract":"<div><div>This article discusses the intricate advancements in lateral bipolar transistors (LBJT) and devices based on silicon germanium (SiGe) lateral hetero-junction bipolar transistors (LHBT). The paper also addresses the developments in vertical SiGe HBTs, and the challenges encountered in fabricating vertical devices on SOI substrates and demonstrates how these hurdles can be mitigated through lateral device technology. Owing to their compatibility with the complementary metal–oxide–semiconductor (CMOS) field effect transistor (FET) process and their appealing prospects in mixed-signal radio frequency applications, SiGe HBT devices remain a compelling choice. Integrating silicon-on-insulator (SOI) substrates eliminates parasitic components, rendering it to be an attractive option when coupled with SiGe HBT technology. This article explores various SOI-based lateral devices, elucidating their architectures and performance characteristics. It notably underscores our recent endeavors concerning the 28 nm fully-depleted SOI (FDSOI)-based SiGe HBT.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"227 ","pages":"Article 109101"},"PeriodicalIF":1.4000,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125000462","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This article discusses the intricate advancements in lateral bipolar transistors (LBJT) and devices based on silicon germanium (SiGe) lateral hetero-junction bipolar transistors (LHBT). The paper also addresses the developments in vertical SiGe HBTs, and the challenges encountered in fabricating vertical devices on SOI substrates and demonstrates how these hurdles can be mitigated through lateral device technology. Owing to their compatibility with the complementary metal–oxide–semiconductor (CMOS) field effect transistor (FET) process and their appealing prospects in mixed-signal radio frequency applications, SiGe HBT devices remain a compelling choice. Integrating silicon-on-insulator (SOI) substrates eliminates parasitic components, rendering it to be an attractive option when coupled with SiGe HBT technology. This article explores various SOI-based lateral devices, elucidating their architectures and performance characteristics. It notably underscores our recent endeavors concerning the 28 nm fully-depleted SOI (FDSOI)-based SiGe HBT.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.