Recent progress in bipolar and heterojunction bipolar transistors on SOI

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-03-20 DOI:10.1016/j.sse.2025.109101

Soumya Ranjan Panda , Thomas Zimmer , Anjan Chakravorty , Sebastien Fregonese

{"title":"Recent progress in bipolar and heterojunction bipolar transistors on SOI","authors":"Soumya Ranjan Panda , Thomas Zimmer , Anjan Chakravorty , Sebastien Fregonese","doi":"10.1016/j.sse.2025.109101","DOIUrl":null,"url":null,"abstract":"<div><div>This article discusses the intricate advancements in lateral bipolar transistors (LBJT) and devices based on silicon germanium (SiGe) lateral hetero-junction bipolar transistors (LHBT). The paper also addresses the developments in vertical SiGe HBTs, and the challenges encountered in fabricating vertical devices on SOI substrates and demonstrates how these hurdles can be mitigated through lateral device technology. Owing to their compatibility with the complementary metal–oxide–semiconductor (CMOS) field effect transistor (FET) process and their appealing prospects in mixed-signal radio frequency applications, SiGe HBT devices remain a compelling choice. Integrating silicon-on-insulator (SOI) substrates eliminates parasitic components, rendering it to be an attractive option when coupled with SiGe HBT technology. This article explores various SOI-based lateral devices, elucidating their architectures and performance characteristics. It notably underscores our recent endeavors concerning the 28 nm fully-depleted SOI (FDSOI)-based SiGe HBT.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"227 ","pages":"Article 109101"},"PeriodicalIF":1.4000,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125000462","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This article discusses the intricate advancements in lateral bipolar transistors (LBJT) and devices based on silicon germanium (SiGe) lateral hetero-junction bipolar transistors (LHBT). The paper also addresses the developments in vertical SiGe HBTs, and the challenges encountered in fabricating vertical devices on SOI substrates and demonstrates how these hurdles can be mitigated through lateral device technology. Owing to their compatibility with the complementary metal–oxide–semiconductor (CMOS) field effect transistor (FET) process and their appealing prospects in mixed-signal radio frequency applications, SiGe HBT devices remain a compelling choice. Integrating silicon-on-insulator (SOI) substrates eliminates parasitic components, rendering it to be an attractive option when coupled with SiGe HBT technology. This article explores various SOI-based lateral devices, elucidating their architectures and performance characteristics. It notably underscores our recent endeavors concerning the 28 nm fully-depleted SOI (FDSOI)-based SiGe HBT.

查看原文本刊更多论文

SOI上双极和异质结双极晶体管的研究进展

本文讨论了横向双极晶体管（LBJT）和基于硅锗（SiGe）横向异质结双极晶体管（LHBT）的器件的复杂进展。本文还介绍了垂直SiGe HBTs的发展，以及在SOI基板上制造垂直器件所遇到的挑战，并展示了如何通过横向器件技术减轻这些障碍。由于其与互补金属氧化物半导体（CMOS）场效应晶体管（FET）工艺的兼容性及其在混合信号射频应用中的诱人前景，SiGe HBT器件仍然是一个令人信服的选择。集成绝缘体上硅（SOI）衬底消除了寄生元件，使其与SiGe HBT技术相结合时成为一个有吸引力的选择。本文探讨了各种基于soi的横向设备，阐明了它们的体系结构和性能特征。它特别强调了我们最近在基于28纳米全耗尽SOI （FDSOI）的SiGe HBT方面的努力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.