Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-25 DOI:10.1016/j.mssp.2025.109509

P. Murugapandiyan , S. Maheswari , A.S. Augustine Fletcher , G. Saranya , P. Anandan

{"title":"Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance","authors":"P. Murugapandiyan , S. Maheswari , A.S. Augustine Fletcher , G. Saranya , P. Anandan","doi":"10.1016/j.mssp.2025.109509","DOIUrl":null,"url":null,"abstract":"<div><div>This comprehensive review examines the significant advancements in Scandium Aluminum Nitride/Gallium Nitride (ScAlN/GaN) High Electron Mobility Transistors (HEMTs). The incorporation of scandium in conventional AlN barriers has revolutionized III-nitride device technology through enhanced polarization effects and superior electrical properties. We analyze the evolution of material growth techniques, device architectures, and performance metrics, demonstrating remarkable improvements in device characteristics. The review encompasses detailed comparisons with emerging technologies, and substrate alternatives. Through analysis of material parameters, growth conditions, and device physics, we provide insights into the fundamental mechanisms enabling these performance enhancements. Recent developments in barrier layer optimization and novel gate architectures have significantly improved performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109509"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S136980012500246X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This comprehensive review examines the significant advancements in Scandium Aluminum Nitride/Gallium Nitride (ScAlN/GaN) High Electron Mobility Transistors (HEMTs). The incorporation of scandium in conventional AlN barriers has revolutionized III-nitride device technology through enhanced polarization effects and superior electrical properties. We analyze the evolution of material growth techniques, device architectures, and performance metrics, demonstrating remarkable improvements in device characteristics. The review encompasses detailed comparisons with emerging technologies, and substrate alternatives. Through analysis of material parameters, growth conditions, and device physics, we provide insights into the fundamental mechanisms enabling these performance enhancements. Recent developments in barrier layer optimization and novel gate architectures have significantly improved performance.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.