Effect and mechanism of thiourea on indium electrocrystallization in sulfate electrolyte

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-25 DOI:10.1016/j.mssp.2025.109493

Zeyu Wang , Xun Wang , Bo Li , Yonggang Wei , Hua Wang

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引用次数: 0

Abstract

In the realm of advanced technologies, indium is a critical metal with wide-ranging applications, and the efficient purification of indium has emerged as a topic of significant industrial interest. This study investigates the use of gelatin and thiourea as additives to mitigate the adverse effects of dendrite growth during indium electrolysis. Additionally, agitation was incorporated into the electrolysis process to further enhance the morphology of cathodic indium deposition. Under optimal conditions of 0.5 g/L gelatin and 0.05 g/L thiourea, current efficiency increased by 6.2 %, while the recovery improved by 5.7 %. Scanning electron microscopy (SEM) was employed to examine the dendritic growth of indium on titanium electrodes. The findings indicated that the combination of gelatin, thiourea, and stirring led to a more compact and uniform coating. The electrodeposition mechanisms of indium in various electrolytic environments were further elucidated through cyclic voltammetry and chronoamperometry, revealing that under the influence of gelatin and thiourea, the nucleation process on titanium shifted to a continuous mode.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.