Engineering of extended peripheral acceptor moieties into imide pyrrole based materials for promising photovoltaic properties: A quantum chemical approach

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Iqra Shafiq , Gang Wu , Misbah Azhar , Iram Irshad , Rabia Baby , Norah Alhokbany
{"title":"Engineering of extended peripheral acceptor moieties into imide pyrrole based materials for promising photovoltaic properties: A quantum chemical approach","authors":"Iqra Shafiq ,&nbsp;Gang Wu ,&nbsp;Misbah Azhar ,&nbsp;Iram Irshad ,&nbsp;Rabia Baby ,&nbsp;Norah Alhokbany","doi":"10.1016/j.mssp.2025.109477","DOIUrl":null,"url":null,"abstract":"<div><div>Herein, a series of NFA-based (<strong>DPP1</strong>-<strong>DPP6</strong>) chromophores were designed rationally by altering the terminal acceptors of (<strong>DPPR</strong>) reference chromophore, while retaining the selenophene <em>π</em>-spacer and central acceptor unit (A2) same. DFT and TD-DFT calculations were performed by using the M06/6-311G(d,p) functional to explore their photovoltaic properties. FMOs analysis unveiled that <strong>DPP1</strong>-<strong>DPP6</strong> molecules showed narrow band gaps and broader absorption spectra in the visible range as compared to <strong>DPPR</strong>. The increasing order of <em>λ</em><sub>max</sub> of aforementioned chromophores is found as <strong>DPPR</strong> &lt; <strong>DPP1</strong> &lt;<strong>DPP2</strong> &lt;<strong>DPP6</strong> &lt;<strong>DPP3</strong> &lt;<strong>DPP4</strong> &lt;<strong>DPP5</strong> in chloroform solvent. Particularly, <strong>DPP5</strong> exhibited the maximum absorption peak at 636.105 nm and the lowest transition energy of 1.949 eV, mainly because of terminal electron-withdrawing acceptor groups. Interestingly, all derivatives exhibited lower <em>E</em><sub>b</sub> values (0.597–0.630 eV) compared to the reference (0.636 eV) which implied a faster rate of exciton dissociation and enhanced charge transfer compared to <strong>DPPR</strong>, and further supported by <span>DOS</span> and TDM analyses. Moreover, a notable photovoltaic response in terms of <em>V</em><sub><em>oc</em></sub> was observed for all examined compounds, suggesting their potential suitability for future use. Thus, our study urges experimentalists to synthesize these organic systems to achieve high efficiency photovoltaic devices. This work uncovers that introducing groups into NFAs is a fruitful approach for advancing OSCs, and the findings disclosed herein are supportive to designing new NFAs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109477"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125002148","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Herein, a series of NFA-based (DPP1-DPP6) chromophores were designed rationally by altering the terminal acceptors of (DPPR) reference chromophore, while retaining the selenophene π-spacer and central acceptor unit (A2) same. DFT and TD-DFT calculations were performed by using the M06/6-311G(d,p) functional to explore their photovoltaic properties. FMOs analysis unveiled that DPP1-DPP6 molecules showed narrow band gaps and broader absorption spectra in the visible range as compared to DPPR. The increasing order of λmax of aforementioned chromophores is found as DPPR < DPP1 <DPP2 <DPP6 <DPP3 <DPP4 <DPP5 in chloroform solvent. Particularly, DPP5 exhibited the maximum absorption peak at 636.105 nm and the lowest transition energy of 1.949 eV, mainly because of terminal electron-withdrawing acceptor groups. Interestingly, all derivatives exhibited lower Eb values (0.597–0.630 eV) compared to the reference (0.636 eV) which implied a faster rate of exciton dissociation and enhanced charge transfer compared to DPPR, and further supported by DOS and TDM analyses. Moreover, a notable photovoltaic response in terms of Voc was observed for all examined compounds, suggesting their potential suitability for future use. Thus, our study urges experimentalists to synthesize these organic systems to achieve high efficiency photovoltaic devices. This work uncovers that introducing groups into NFAs is a fruitful approach for advancing OSCs, and the findings disclosed herein are supportive to designing new NFAs.
求助全文
约1分钟内获得全文 求助全文
来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信