Effect of Fe-complex catalysts on passivation layer and hydroxyl radical generation during tungsten chemical mechanical planarization

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-18 DOI:10.1016/j.mssp.2025.109475

Hyunho Kim , Gyuyoung Lee , Seunghwan Lee , Pengzhan Liu , Jongyeong Jeon , Ziyang Wang , Chaerin Park , Jaewon Lee , Hosin Hwang , Chulwoo Bae , Taesung Kim

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Abstract

This study investigates the effect of Fe-complex catalysts in improving tungsten chemical mechanical planarization (CMP) by enhancing material removal rate (MRR) and surface quality. EDTA-Fe and citrate-Fe (CTA-Fe) were evaluated against ferric nitrate (Fe(NO₃) ₃) as reference. The catalysts’ ability to generate hydroxyl radicals via the Fenton reaction and form a tungsten passivation layer (WO₃) was evaluated. Results showed CTA-Fe achieved the best CMP performance with an MRR of 766.5 Å/min and a surface roughness (R_a) of 2.51 nm, attributed to continuous hydroxyl radical generation and efficient WO₃ layer formation. EDTA-Fe exhibited superior performance in static etch rate (SER) due to rapid initial passivation layer formation but showed lower CMP efficiency with an MRR of 304.4 Å/min and a R_a of 5.49 nm. In addition, Fe-complex catalysts were found to leave less residual iron contamination after CMP compared to Fe(NO₃)₃. This study elucidates the critical role of hydroxyl radical generation in improving tungsten CMP performance and demonstrates the potential of Fe-complex catalysts for advanced semiconductor manufacturing process.

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本研究探讨了铁络合物催化剂通过提高材料去除率（MRR）和表面质量来改善钨化学机械平坦化（CMP）的效果。以硝酸铁（Fe(NO3) 3）为参照物，对乙二胺四乙酸铁（EDTA-Fe）和柠檬酸铁（CTA-Fe）进行了评估。评估了催化剂通过芬顿反应生成羟基自由基并形成钨钝化层（WO3）的能力。结果表明，CTA-Fe 的 CMP 性能最佳，其 MRR 为 766.5 Å/min，表面粗糙度 (Ra) 为 2.51 nm，这归功于羟基自由基的持续生成和 WO3 层的有效形成。EDTA-Fe 由于能快速形成初始钝化层，因此在静态蚀刻速率 (SER) 方面表现优异，但 CMP 效率较低，MRR 为 304.4 Å/min，Ra 为 5.49 nm。此外，与 Fe(NO3)3 相比，铁络合物催化剂在 CMP 之后留下的残余铁污染更少。这项研究阐明了羟基自由基的生成在提高钨 CMP 性能方面的关键作用，并证明了铁络合物催化剂在先进半导体制造工艺中的潜力。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.