Effect of clay on dielectric behaviour of TiO2 embedded PVDF nanocomposite for charge storage applications

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-18 DOI:10.1016/j.mssp.2025.109480

Sachit K. Das , Debasrita Bharatiya , Sudhir Minz , Ritu Saraswat , Sarat K. Swain

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引用次数: 0

Abstract

The present work involves dielectric properties of PVDF/TiO₂ and PVDF/TiO₂/Clay nanocomposite synthesized via solution casting technique. The increased nucleation density attributed to PVDF, TiO₂ and Cloisite® 30B NPs causes oriented planes that improve the crystallinity of the resultant nanocomposites. The morphological images prove the uniform deposition of TiO₂ and Cloisite® 30B NPs in the ternary nanocomposite. Improved roughness of ternary nanocomposite is observed in AFM images causing huge charge-storing properties in the polymer-based nanocomposite. The highest ε' of PVDF/TiO₂ and PVDF/TiO₂/Clay nanocomposites are achieved as 2 × 10³ and 1.4 × 10⁴ at 1 kHz, respectively. The maximum ε′′ of PFTC-6 nanocomposite is found to be 4.04 at 1 kHz. This giant permittivity of the prepared ternary polymer-based nanocomposite could be a great pathway for the electronic industry. The PVDF/TiO₂ nanocomposite shows maximum σ_ac conductivity of 5.16 × 10⁻⁴ S/m and 5.87 × 10⁻⁴ S/m at 1 kHz and 3 MHz, meanwhile the PVDF/TiO₂/Clay nanocomposite shows maximum σ_ac conductivity of 3.37 × 10⁻³ S/m and 5.16 × 10⁻³ S/m at 1 kHz and 3 MHz, respectively. The high thermal stability and excellent dielectric behaviour of PVDF/TiO₂/Clay nanocomposite prove its worth towards high performance in charge storage and electronic applications.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.