Image analysis-based prediction of optical reflectance on mild-textured surface for tandem bottom cell

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-23 DOI:10.1016/j.mssp.2025.109498

MyeongSeob Sim , Junyoung Jeong , Dowon Pyun , Dongjin Choi , Hoyoung Song , Seungtae Lee , Myeongji Woo , Jaewon Lee , Yoonmook Kang , Donghwan Kim , Hae-Seok Lee

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引用次数: 0

Abstract

Silicon-based tandem solar cells show significant potential for achieving high efficiency at a low cost in the solar energy field. Enhancing the optical performance of tandem bottom cells through textured silicon surfaces has been widely recognized. Therefore, precise control of surface texturing is critical for improving optical reflectance and achieving optimal current matching across tandem cells. Furthermore, careful optimization of pyramid height and surface roughness is essential for compatibility with subsequent processing steps. In this study, we employed a potassium silicate (K₂SiO₃) solution-based texturing process to fabricate sub-micrometer pyramid structures on silicon surfaces. The evolution of the pyramidal texture was characterized using SEM surface imaging, and the process parameters were extracted through image analysis techniques. The parameters enabled reliable prediction of wavelength-dependent optical reflectance, providing insights into the relationship between texture features and optical performance.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.