Polydopamine-mediated interfacial optimization in WO3/@PDA/Ag3PO4 heterojunction for enhanced photocatalytic degradation of organic pollutants

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-22 DOI:10.1016/j.mssp.2025.109491

Mengmeng Zhang, Yi Huang, Biao Deng, Rongxiang Zhu

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引用次数: 0

Abstract

To increase active sites, mitigate photo corrosion, expedite electron transfer and suppress the recombination of photogenerated charge carriers, we synthesized a WO₃@PDA/Ag₃PO₄ ternary composites using a straightforward method, where PDA served as adhesion interface and electronic transfer bridge. The photocatalytic activity of WO₃@PDA/Ag₃PO₄ was assessed by degrading organic pollutants under visible light. The results demonstrated that 0.5 g/L WO₃@PDA/Ag₃PO₄ could eliminate 30 mg/L of methyl orange (MO) within 60 min and achieve an 80.7 % degradation rate for moxifloxacin (Mox) within 180 min. After five adsorption-photocatalytic cycles, the WO₃@PDA/Ag₃PO₄ maintained a removal efficiency of 95.88 % for MO and 75.56 % for Mox, showcasing its cycling stability. The photocatalytic mechanism of WO₃@PDA/Ag₃PO₄ was elucidated through a series of characterizations, which indicated that the Z-type heterojunction formed between WO₃ and Ag₃PO₄, along with PDA's electron-conducting ability, provided a strong driving force for the photocatalytic reaction. This study introduces an idea for enhancing the construction of Z-type heterojunctions with PDA as the electron-conducting interface, thereby improving photocatalytic performance.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.