High performance of self-powered Ga2O3:Si/p-GaN heterojunction UV photodetectors

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-21 DOI:10.1016/j.mssp.2025.109479

Thi Kim Oanh Vu , Hai Bui Van , Nguyen Xuan Tu , Nguyen Van Kha , Bui Thi Thu Phuong , Nguyen Thi Minh Hien , Eun Kyu Kim

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引用次数: 0

Abstract

High performance ultraviolet (UV) photodetectors have garnered much interest for their wide range of potential in uses. On the basis of this, a self-powered UV photodetectors (PDs) based on β-Ga₂O₃:Si/p-GaN heterojunctions were fabricated by pulsed laser deposition (PLD) system equipped with a neodymium-doped yttrium aluminum garnet (Nd:YAG) laser at wavelength center of 266 nm. Then, the Ga₂O₃ (99.9 %) doped with 0.1 wt% Si was used as source to deposit Ga₂O₃:Si thin films on the p-GaN layer, which were deposited on c-sapphire substrates by sputtering technique. The high quality of β-Ga₂O₃:Si thin films are formed by well controlling the oxygen pressure during deposition, which significantly enhances the device performance. In the self-powered mode with the bias voltage of 0V, the photodetectors fabricated under oxygen pressure of 5 mTorr with low dark current of 0.6 nA, high photoresponsivity and detectivity of 2.44

\times

10⁻² A/W and 2.45x10¹¹ cmHz^1/2W, respectively. This study represents one of the initial self-powered UV photodetectors with unique properties, which greatly enhances the progress of multifunctional UV photodetectors.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.