Sensitizer-controlled charge transfer and optoelectronic properties of thiophene-cyanoacrylic-acid sulfonyl functionalized fragments anchored on TiO2 nanocluster for efficient organic solar cells

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Simplice Koudjina , Vipin Kumar , Alioui Abdelaaziz , Si Mohamed Bouzzine , Guy Y.S. Atohoun , Mohamed Hamidi , Joachim D. Gbenou , Prabhakar Chetti
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Abstract

Herein, a mechanistic molecular engineering strategy was set up to prepare a series of efficient Donor–bridge–Acceptor (D–π–A) sensitizers for dye-sensitized solar cells (DSSCs). The essential core of these dyes is the TCAS1 reference, with substantial varying donors on the structural molecular chain. To analyze geometrical, optoelectronic and photovoltaic properties of the considered sensitizers (TCAS16), the DFT/TD-DFT approaches were used. The position of the π-Sulfonyl-bridge on the TCAS structure influenced the optoelectronic properties of DSSCs. The TCAS16 were adsorbed on the Nanocrystalline TiO2 cluster surface. The evaluations of the optical charge transfer of TCAS16 along with different analyses including frontier molecular orbitals (FMOs) and molecular electrostatic potential (MEP) are explored. Indeed, the important parameters including, open-circuit voltage (Voc), fill factor (FF), short-circuit current density (Jsc), light-harvesting efficiency (LHE), electron injection force (ΔGinj), dye regeneration force (ΔGreg), dye recombination energy (ΔGrec), reorganization energies (λ), density of states (DOS) and transition density matrix (TDM) maps are estimated to see the effect of π-Sulfonyl-bridge group. Moreover, all of the TCAS16 dyes showed significant UV–visible absorption and exhibited higher absorption (471–562 nm) compared to the reference TCAS1 dye (478 nm). The designed TCAS6 dye shows most enhanced optoelectronic characteristics, with higher band gap energy of 2.37 eV, higher dipole moment (μ=10.28Debyes), higher maximum absorbance (562 nm), higher excited state lifetime τ=0.201ns, and higher open-circuit voltage VOC=1.11V than the other dyes. Furthermore, the similarity of the adsorption energies was observed for all TCAS16 dyes, which reveal that the adsorption energy is not much, depend on the π-Sulfonyl-bridge insertion but rather on the anchored group. Therefore, the π-Sulfonyl-bridge insertion suggests that the change in π-bridge of dye photosensitizers can be a practical strategy to improve the charge transportation and efficiency in organic electronic materials.

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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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