Sonochemical assisted auto-combustion synthesis of NiCo2O4/NiO/rGO nanocomposite and examination of photocatalytic ability for antibiotics photo-degradation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-25 DOI:10.1016/j.mssp.2025.109490

Seyed Ali Hosseini Moradi , Nader Ghobadi , Seyed Milad Tabatabaeinejed

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Abstract

In this research, an attempt was made to synthesize an efficient nanocomposite for photocatalytic degradation of antibiotics. NiCo₂O₄/NiO/rGO nanocomposite was synthesized with auto-combustion method. Various parameter affected of NiCo₂O₄/NiO/rGO morphology like type of green fuel, molar ratio of green fuel. Morphology, shape size, and surface strongly affect the optical, electrochemical, catalytic, and magnetic properties of oxide form of nanostructured materials. According to the Taouk equation, NiCo₂O₄/NiO/rGO nanocomposite possess a suitable bandgap (2.8 eV) in the visible region. Ability of NiCo₂O₄/NiO/rGO nanocomposite for antibiotics elimination was surveyed. Photocatalytic experiments results exposed that prepared nanocomposite could a wide range of pollution efficiency. For example, the tetracycline elimination efficiency was 92.9 %. The conceivable mechanism of antibiotic degradation by photocatalytic performance was studied and it is concluded that OH• helps visible light-assisted elimination of contamination. Also, the probable reaction constant rate (k) of the pollutant was determined by the Langmuir–Hinshelwood reaction, showing that the rate constant for the photocatalytic application was achieved in a k = 0.01310 min⁻¹.

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声化学辅助自燃烧合成NiCo2O4/NiO/rGO纳米复合材料及其对抗生素光降解的光催化性能

本研究试图合成一种高效的光催化降解抗生素的纳米复合材料。采用自燃烧法制备了NiCo2O4/NiO/rGO纳米复合材料。绿色燃料的种类、绿色燃料的摩尔比等参数对NiCo2O4/NiO/rGO形貌有影响。形貌、形状尺寸和表面对纳米结构材料氧化物的光学、电化学、催化和磁性有很大影响。根据Taouk方程，NiCo2O4/NiO/rGO纳米复合材料在可见光区具有合适的带隙（2.8 eV）。考察了NiCo2O4/NiO/还原氧化石墨烯纳米复合材料对抗生素的去除能力。光催化实验结果表明，制备的纳米复合材料具有较宽的污染效率。例如，四环素消除效率为92.9%。研究了光催化降解抗生素的可能机制，得出OH•有助于可见光辅助消除污染的结论。此外，通过Langmuir-Hinshelwood反应确定了污染物的可能反应常数速率(k)，表明在k = 0.01310 min−1时达到了光催化应用的速率常数。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.