Toward characterization and assessment of MoS2 fundamental device properties by photoluminescence

Abstract

The continuous expansion of two-dimensional materials research since the first developments of over 15 years ago has enabled tremendous progress in the fundamental understanding of their properties and behavior. The promises held by these materials to facilitate scaling beyond silicon-based device architectures are still valid, but the manufacturability and integration with silicon technology remain challenging. On the metrology side, characterization of the device channel and assessment of the expected performance is lacking, at least in a fully non-destructive and process line-compatible implementation. The current paper demonstrates a clear correlation between metrics associated with the transistor performance on one hand, and parameters from photoluminescence spectra on the other. The concept is demonstrated on state-of-the-art 300 mm process MoS₂ devices, without the need for specific measurement conditions or sample preparation. Being truly non-contact and relatively fast, this analysis provides the community with a potential route toward non-invasive material quality assessment, applicable at several stages of the process and with a direct connection to device performance.