Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-09 DOI:10.1109/TDMR.2024.3513549

Artur Ghukasyan;Karen Amirkhanyan;Grigor Tshagharyan;Gurgen Harutyunyan;Yervant Zorian

引用次数: 0

Abstract

With the transition from planar to three-dimensional transistor architectures, many new factors have entered the scene, highlighting the need for thorough investigation of ever-shrinking technology nodes, as well as the development of advanced methodologies capable of addressing the challenges of testing modern complex memory systems. This paper examines the challenges associated with Gate-All-Around emerging technology paradigm and proposes a conceptual framework aimed at comprehensively investigating the universe of realistic defects, accurately modeling the resulting faulty behavior, and ultimately developing effective test solutions.

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栅极全能sram故障建模与测试算法开发框架

随着从平面到三维晶体管架构的转变，许多新的因素已经进入了场景，突出了对不断缩小的技术节点进行彻底研究的需要，以及能够解决测试现代复杂存储系统挑战的先进方法的开发。本文研究了与gate -全能新兴技术范例相关的挑战，并提出了一个概念性框架，旨在全面调查现实缺陷的范围，准确地建模所产生的错误行为，并最终开发有效的测试解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.