Failure analysis and reliability assessment of gold-plated fuzz buttons in elevated temperature

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
L. Zhang , S. Wang , X. Chen , J. Guo , L. Xu , S. Ling , X. Zhang
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引用次数: 0

Abstract

Gold-plated electrical contacts are widely used in electrical and electronic systems to provide high-quality and reliable connections with minimal signal distortion or power loss. Many studies have been conducted on the failure analysis of gold-coated contacts in high-temperature environments. However, fuzz buttons, as one of the typical end-face contacts, have been less studied. This paper presents an experimental method to analyze the effects of elevated environmental temperatures on the performance of gold-plated fuzz buttons. The results show that the natural length and compression force of fuzz buttons were both shortened and reduced after the elevated temperature tests. Quantitative analysis of the microstructural changes in the test samples was conducted using characterization techniques such as optical microscopy, scanning electron microscopy (SEM), and focused ion beam (FIB) technology. The findings indicate that a large number of twin structures disappeared, the size of the precipitated phases increased, and the dislocation density decreased, leading to a reduced ability of fuzz buttons to resist plastic deformation and resulting in stress relaxation. Furthermore, a nonlinear Wiener stochastic process was used to model the degradation path of the test samples, while the generalized Eyring model was employed to describe the relationship between sample lifetimes and high temperatures. Using the maximum likelihood estimation (MLE) method, the model parameters were estimated from the integral statistics of all performance degradation data, successfully predicting the reliability of the fuzz buttons.
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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