Optimization and photocatalytic degradation of crystal violet dye using Sr-ZnO/activated carbon nanoneedles

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-17 DOI:10.1016/j.mssp.2025.109481

R. Dhanabal, P. Gomathi Priya

引用次数: 0

Abstract

In this present work, Strontium doped Zinc oxide with Activated carbon from Banana Pseudostem was biosynthesized using Piper nigrum seed extract via Chemical precipitation method. The nanocomposites were characterized for structural and morphological analysis using X-Ray Diffraction, Fourier Transform Infrared and Field Emission Scanning Electron Microscopy with Energy Dispersive X-Ray Spectroscopy. These results confirmed the presence of Activated carbon on the Strontium doped Zinc oxide nanoparticles. The photocatalytic degradation of Crystal Violet dye wastewater was done using the synthesized nanocomposites. The optimal condition was found to be 20 mg/L of Effluent concentration, 100 mg of Catalyst dosage and pH of 7 which resulted in the maximum degradation efficiency of 98.92 %. These results shows promising potential of Strontium doped Zinc oxide with Activated carbon as a photocatalyst for sustainable environment.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.