Synthesis of novel Fe0.11V2O5.15/g-C3N4 for electrochemical paracetamol detection and electrocatalytic water splitting

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-16 DOI:10.1016/j.mssp.2025.109468

Shakeel Ahmad , Iqra Fareed , Muhammad Danish Khan , Tahmina Maqsood , Muhammad Saeed Akhtar , Mashal Firdous , Zulfiqar Ali , Yahya Sandali , Muhammad Tahir , Faheem K. Butt

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引用次数: 0

Abstract

Iron vanadate, when integrated with g-C₃N₄, exhibits remarkable synergy, enabling the design of high-efficiency materials with superior electrochemical characteristics for diverse applications. In this work, novel Fe_0.11V₂O_5.15/g-C₃N₄ (FVOCN) nanocomposite was synthesized for dual applications in electrochemical detection of paracetamol and electrocatalytic water splitting. The composites were prepared using co-precipitation method with varying g-C₃N₄ content and characterized by XRD, FTIR and SEM. Fe_0.11V₂O_5.15 with 40 % g-C₃N₄ (FVOCN-40) demonstrated enhanced paracetamol detection with a high anodic current of 378 μA and smallest LoD value of 0.67 mM among all. Additionally, electrochemical tests demonstrated superior catalytic performance of FVOCN-40 than pristine Fe_0.11V₂O_5.15 and g-C₃N₄. Specifically, FVOCN-40 showed an overpotential of 330 mV at 10 mA/cm² and a low tafel slope of 63 mV dec⁻¹ for OER; while for HER, FVOCN-40 achieved the overpotential of 461 mV. Moreover, FVOCN-40 require merely 1.67 V to reach 10 mA/cm² for overall water splitting. These results establish FVOCN-40 as a promising multifunctional material for biosensing and energy conversion applications.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.