Process optimization of AlGaN high temperature reactor and multi-physicals calculation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-17 DOI:10.1016/j.mssp.2025.109474

Jiadai An , Xianying Dai , Ying Liu , Kama Huang , Dengke Zhang

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引用次数: 0

Abstract

Metal organic chemical vapor deposition (MOCVD) is a typical and effective approach to AlGaN thin film synthesize. High temperature is an effective mean to improve the crystallization quality. However, problems such as low efficiency, low yield and difficult process control are common in the growing process. Based on the consideration of operating pressure, gas flow rate and rotation speed, a high temperature reactor of AlGaN thin film MOCVD growth is proposed in this paper. The process parameters were optimized by CFD simulation, and multi-physicals such as temperature field, pressure field, velocity field and density field were calculated and analyzed by finite element method. The stability of the flow field in the reactor is realized, the parasitic reaction is effectively reduced, and the deposition efficiency and film quality are ensured. This research not only provides an effective scheme for high quality and efficient AlGaN synthesis, but also provides a theoretical basis for subsequent experiments and equipment improvement.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.