Study on the properties of boromullite-type luminescent material Al18B4O33: Cr3+

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yanji Zhang , Xiuling Liu , Yanping Wang , Haiying Sun , Xiaoyun Mi
{"title":"Study on the properties of boromullite-type luminescent material Al18B4O33: Cr3+","authors":"Yanji Zhang ,&nbsp;Xiuling Liu ,&nbsp;Yanping Wang ,&nbsp;Haiying Sun ,&nbsp;Xiaoyun Mi","doi":"10.1016/j.mssp.2025.109473","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, the high-temperature solid-phase method was used to synthesise Al<sub>18</sub>B<sub>4</sub>O<sub>33</sub>: Cr<sup>3+</sup> luminescent materials with a rod-like structure of about 2 μm. In addition, Cr<sup>3+</sup> ions occupy the Al<sup>3+</sup> site in the main body of the Al<sub>18</sub>B<sub>4</sub>O<sub>33</sub> host. Investigating its luminescence properties, it is found that under 384 nm excitation, Al<sub>18</sub>B<sub>4</sub>O<sub>33</sub>: Cr<sup>3+</sup> produces broadband emission located at 712 nm belonging to the <sup>4</sup>T<sub>2</sub>→<sup>4</sup>A<sub>2</sub> transition of Cr<sup>3+</sup>. The best luminescence intensity was achieved when the Cr<sup>3+</sup> doping concentration was 0.015 mol. And the quantum efficiency reaches 62.6 %. The relationship between the luminescence intensity of excitation and emission spectra as a function of concentration and suggests that the mechanism of concentration quenching of Cr<sup>3+</sup> in Al<sub>18</sub>B<sub>4</sub>O<sub>33</sub> is caused by non-radiative energy transfer among the nearest-neighbor ions. Through the analysis of thermal stability spectrum, it was found that the luminescence intensity could be achieved up to 65.2 % of the room temperature at 423 K, showing good thermal stability. Testing the water stability of Al<sub>18</sub>B<sub>4</sub>O<sub>33</sub>: Cr<sup>3+</sup> showed that the luminescence intensity decreased to 61.8 % of the initial intensity after 5 h of immersion. The results suggest that Al<sub>18</sub>B<sub>4</sub>O<sub>33</sub>: Cr<sup>3+</sup> provides a new direction for the prospects of NIR development.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109473"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125002100","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, the high-temperature solid-phase method was used to synthesise Al18B4O33: Cr3+ luminescent materials with a rod-like structure of about 2 μm. In addition, Cr3+ ions occupy the Al3+ site in the main body of the Al18B4O33 host. Investigating its luminescence properties, it is found that under 384 nm excitation, Al18B4O33: Cr3+ produces broadband emission located at 712 nm belonging to the 4T24A2 transition of Cr3+. The best luminescence intensity was achieved when the Cr3+ doping concentration was 0.015 mol. And the quantum efficiency reaches 62.6 %. The relationship between the luminescence intensity of excitation and emission spectra as a function of concentration and suggests that the mechanism of concentration quenching of Cr3+ in Al18B4O33 is caused by non-radiative energy transfer among the nearest-neighbor ions. Through the analysis of thermal stability spectrum, it was found that the luminescence intensity could be achieved up to 65.2 % of the room temperature at 423 K, showing good thermal stability. Testing the water stability of Al18B4O33: Cr3+ showed that the luminescence intensity decreased to 61.8 % of the initial intensity after 5 h of immersion. The results suggest that Al18B4O33: Cr3+ provides a new direction for the prospects of NIR development.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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