Impact of humidity on long-term stability of HfS2 grown on sapphire substrate by chemical vapor deposition and strategies to prevent native oxidation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-14 DOI:10.1016/j.mssp.2025.109471

Juchan Hwang , Junhyeon Mun , Ki-Tae Lee , Taehun Lee , Jongmin Kim , Jungwook Min , Kwangwook Park

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Abstract

Two-dimensional transition metal dichalcogenides (TMDs) are susceptible to native oxidation by oxygen and/or moisture, which can completely alter their physical and chemical properties. Hafnium disulfide (HfS₂), which is expected to exhibit superior properties, also faces significant limitations in long-term device operation due to rapid oxidation into HfS_2-xO_x, resulting in material quality degradation. In this paper, we focus on the native oxidation caused by atmospheric humidity, confirming that the A_1g mode peak of HfS₂ grown by chemical vapor deposition (CVD) completely disappear within a week under high humidity (70 % RH) at room temperature and atmospheric pressure. As countermeasures against oxidation, we deposited polymethyl methacrylate (PMMA) and Al₂O₃ on the HfS₂ surface and evaluated their ability to prevent oxidation by comparing them with native HfS₂ under high and low humidity conditions. Thermodynamic modeling further showed that HfS₂ reacts with O₂ and H₂O to form HfO₂, but not with Al₂O₃, indicating Al₂O₃ effectively protects against HfS₂ oxidation. Our observations give guidance in choosing a protective layer for TMDs to prevent native oxidation.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.