Low power consumption of non-volatile memory device by tunneling process engineering

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-03-09 DOI:10.1016/j.sse.2025.109100

Fucheng Wang , Mengmeng Chu , Jingwen Chen , Zhong Pan , Yongsang Kim , Jang kun Song , Muhammad Quddamah Khokhar , Junsin Yi

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引用次数: 0

Abstract

Compared with Si₃N₄ and Al₂O₃, SiO₂ grown using thermal oxidation process as tunneling layer has the advantages of high bandgap and well interface contact with the surface of silicon wafer, which can be a great solution to the leakage current problem of metal–insulator-semiconductor (MIS) devices. This study investigates the effect of improving the SiO₂ tunnel layer on the operating voltage of MIS devices with a SiO₂/HfAlO_x/Al₂O₃ structure. The result shows the operating voltage changes as the tunneling layer thickness decreases, with a minimum of only 12 V for a 1.5 nm tunneling layer thickness. In addition, we found that pinholes are generated on the film surface when annealing a 1.5 nm SiO₂ tunnel layer at 850 °C N₂, in which case the operating voltage of the device is reduced to only 10 V, though it was also accompanied by the deterioration of the retention characteristics.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.