Localization enhancement in quantitative thermal lock-in analysis using spatial phase evaluation

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-15 DOI:10.1016/j.microrel.2025.115690

S. Brand , M. Koegel , C. Grosse , F. Altmann , H.T. Devarajulu , F.M. Benito , D. Goyal , M. Pacheco

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引用次数: 0

Abstract

The paper discusses enhancements in quantitative thermal lock-in analysis through spatial phase evaluation for defect localization in complex microelectronic components. It addresses the challenges of increasing integration density and diverse material composition in microelectronics. The primary focus of the present work is placed on improving sensitivity and spatial resolution of lock-in thermography for detection, imaging and the quantitative localization of thermally active electrical defects in all three spatial dimensions inside a device under test (DUT) to enable precise fault isolation. The paper describes the analysis of the lateral phase distribution in the presence of a thermal hot spot for reconstructing the thermal wave at the surface of the DUT and its back-tracing to its source inside the DUT. In the practical application this processing results in a reduction of thermal spreading effects and a precise localization in the lateral and axial (depth) directions. Experimental results demonstrate substantial improvements in precision and accuracy of defect localization and additionally a quantitative depth estimation. The paper highlights the potential application of the proposed method for non-destructive defect localization in 3D-integrated microelectronic devices.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.