Selective grain size enlargement in Contact/Via plugs using Nanosecond green laser annealing

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-03-07 DOI:10.1016/j.sse.2025.109098

Jaejoong Jeong , Youngkeun Park , Hwanuk Guim , Yongku Baek , Heetae Kim , Dongbin Kim , Hui Jae Cho , Su-hyeon Gwon , Min Ju Kim , Byung Jin Cho

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引用次数: 0

Abstract

The rapid decrease in interconnect Critical Dimensions (CDs) within logic devices and growth in the contact height of 3D memory devices have led to increased contact/via plugs resistance. In this study, we introduce an approach to reduce the resistance of the contact/via plugs by engineering the grain size of the plugs using Nanosecond Green Laser Annealing (NGLA) with a low energy fluence (= 0.1 J/cm²). Because of the proximity between adjacent W plugs, diffraction of the laser light can occur which will help the laser energy to be absorbed by the sidewall of the W plugs. In addition, the difference in reflectivity between the plug region and W interconnect lines can cause grain size enlargement to selectively occur in the plug region. The NGLA process increased grain size in the plugs up to 79.9 %, resulting as much as a 26 % reduction in tungsten plug resistance. The standard deviation of the plug resistance was also improved from 14.6 % to 7.9 % after the NGLA process.

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利用纳秒绿色激光退火技术有选择地增大接触/Via 塞的晶粒尺寸

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.