ZIF-67-templated NiCoP bimetallic catalysts for enhanced water splitting performance

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Meijie Ding , Qingsong Yu , Zhiqiang Wei , Dexue Liu
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引用次数: 0

Abstract

Efficient electrocatalysts for the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) are essential to overcoming the slow kinetics of water electrolysis. In this study, a bimetallic NiCoP catalyst with a distinctive hollow structure was synthesized via a ZIF-67 template, followed by etching with Ni2+ aqueous solution and a subsequent phosphorization process. The resulting material demonstrates exceptional electrochemical performance. In HER, it exhibits excellent catalytic activity, achieving an overpotential of 134.6 mV at a current density of 10 mA cm−2 and a Tafel slope of 72.3 mV·dec−1. For OER, at a current density of 10 mA cm−2, the overpotential is 273 mV, with a Tafel slope of 88.9 mV·dec−1. Moreover, the catalyst shows excellent long-term stability. Density functional theory (DFT) calculations indicate that the incorporation of Ni into CoP alters the electronic states at the Fermi level, thereby improving its electrical conductivity. This work not only offers novel insights into the structural design of water splitting catalysts but also highlights the promising potential of NiCoP as an efficient catalyst in the energy conversion domain.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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