A New ECC Configuration Method for DRAM System Considering Metadata

IF 3.6 2区 计算机科学 Q2 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Jaeil Lim;Jaewon Chung;Donghun Jeong;Daegeun Jee;Euicheol Lim
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引用次数: 0

Abstract

In this paper, a new ECC (error correcting code) solution for DRAM (dynamic random access memory) in computing systems is proposed. Existing papers on ECC for DRAM systems do not consider storage space for metadata. The methodology proposed in this paper considers storing metadata attached to a cacheline data in DRAM. We infer the maximum number of single-chip error correction cases that a linear code can support while considering metadata storage space. This can be said to be the maximum theoretical correction probability for a single chip error. A methodology to construct a code with maximum single-chip error correction is presented. A decoding methodology for the code is proposed. The proposed ECC solution can correct not only single chip failure but also additional small bit errors. We calculate the correction capability of the proposed methodology and verified it through simulation. The encoder and decoder hardware were synthesized and compared with existing methodologies.
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来源期刊
IEEE Transactions on Computers
IEEE Transactions on Computers 工程技术-工程:电子与电气
CiteScore
6.60
自引率
5.40%
发文量
199
审稿时长
6.0 months
期刊介绍: The IEEE Transactions on Computers is a monthly publication with a wide distribution to researchers, developers, technical managers, and educators in the computer field. It publishes papers on research in areas of current interest to the readers. These areas include, but are not limited to, the following: a) computer organizations and architectures; b) operating systems, software systems, and communication protocols; c) real-time systems and embedded systems; d) digital devices, computer components, and interconnection networks; e) specification, design, prototyping, and testing methods and tools; f) performance, fault tolerance, reliability, security, and testability; g) case studies and experimental and theoretical evaluations; and h) new and important applications and trends.
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