Fast reverse engineering of chips using lasers, Focused Ion Beams, and confocal and scanning electron microscopy

Abstract

This study presents novel methodologies for the reverse engineering and failure analysis of semiconductor devices, focusing on overcoming the limitations of traditional Focused Ion Beam (FIB) techniques. Central to our approach are two innovative methods: high-precision volumetric imaging via 3D reconstruction from laser-delayered surface profiles and a hybrid delayering technique combining ultrashort pulsed laser removal with FIB polishing. These methods address the challenges of slow delayering processes and uneven layer exposure by enabling faster material removal, minimizing thermal damage, and ensuring precise surface preparation for imaging. The effectiveness of these approaches is demonstrated through detailed imaging of embedded chip circuitry in two advanced technology chips. Our findings highlight significant advancements in the speed, accuracy, and efficiency of semiconductor device analysis, promising to streamline reverse engineering efforts and enhance failure analysis processes.