{"title":"Toward understanding the impacts of dynamic Ron on the efficiency in GaN-based AC-DC flyback converter","authors":"Chih-Yao Chang , Hsing-Hua Hsieh , Cheng-Tsung Ho , Tsung-Hsiu Wu , Ming-Chang Tsou , Chih-Wen Hsiung , Ming-Nan Chuang , Tian-Li Wu","doi":"10.1016/j.microrel.2025.115692","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, the dynamic R<sub>on</sub> effects on the efficiency and conduction loss in GaN-based AC-DC flyback converter was evaluated. Compared to the static on-resistance, the dynamic R<sub>on</sub> of single p-GaN gate HEMT shows a significant increase under hard switching via a double pulse test. In addition, the dynamic R<sub>on</sub> shows a further increase when the pulse time increases, indicating that the real dynamic R<sub>on</sub> in the continuous switching system may not be totally revealed by a single pulse test. On the other hand, the combo IC operated in the system indicates that the substantial increase of dynamic R<sub>on</sub> (>188 % increases) in p-GaN gate HEMTs have the limited impacts on 1) the conduction loss (<9 %) in p-GaN gate HEMTs and 2) the system efficiency (>92 %) in GaN-based AC-DC flyback converter.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115692"},"PeriodicalIF":1.6000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425001052","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, the dynamic Ron effects on the efficiency and conduction loss in GaN-based AC-DC flyback converter was evaluated. Compared to the static on-resistance, the dynamic Ron of single p-GaN gate HEMT shows a significant increase under hard switching via a double pulse test. In addition, the dynamic Ron shows a further increase when the pulse time increases, indicating that the real dynamic Ron in the continuous switching system may not be totally revealed by a single pulse test. On the other hand, the combo IC operated in the system indicates that the substantial increase of dynamic Ron (>188 % increases) in p-GaN gate HEMTs have the limited impacts on 1) the conduction loss (<9 %) in p-GaN gate HEMTs and 2) the system efficiency (>92 %) in GaN-based AC-DC flyback converter.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.