About the influence of temperature operation and packaging stress on the threshold for catastrophic optical damage in laser diodes

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-12 DOI:10.1016/j.microrel.2025.115695

Jorge Souto, José Luis Pura, Julian Anaya, Juan Jimenez

引用次数: 0

Abstract

Catastrophic optical damage (COD) is a degradation mode of laser diodes. COD is associated with a localized overheating of the active region of the laser. The COD power threshold decreases with laser aging and is influenced by operational conditions, such as cavity temperature, and technological factors, including packaging-induced stress. We analyze here the influence of both factors, the temperature of the cavity and the packaging stress, on the local heat sources responsible for COD. Using finite element methods, we extend a thermomechanical COD model to include these variables. The model is applied to a generic AlGaAs/GaAs (808 nm) laser device, but it can be extended to any laser device by taking account of the specific operational characteristics and the material parameters. The results obtained evidence a reduction in the COD power threshold due to junction temperature increase and packaging stress.

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研究了温度操作和封装应力对激光二极管灾难性光损伤阈值的影响

灾难性光损伤（COD）是激光二极管的一种退化模式。COD与激光活跃区的局部过热有关。COD功率阈值随激光老化而降低，并受操作条件（如腔温）和工艺因素（包括封装引起的应力）的影响。本文分析了腔体温度和封装应力这两个因素对产生COD的局部热源的影响。使用有限元方法，我们扩展了热力学COD模型以包含这些变量。该模型适用于一般的AlGaAs/GaAs （808 nm）激光器件，但考虑到具体的工作特性和材料参数，可以扩展到任何激光器件。结果表明，由于结温升高和封装应力，COD功率阈值降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.