Active gate driver for current overshoot suppression of SiC+Si hybrid switches with dynamic gate current regulation

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-12 DOI:10.1016/j.microrel.2025.115689

Ping Liu , Yongjie Liu , Qi Cao , Biao Xiao , Mingbin Tang , Chunming Tu , Bin Yu

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引用次数: 0

Abstract

Hybrid Switch (HyS) is consisted of a high-current Si-insulated gate bipolar transistor (IGBT) and a low-current Silicon Carbide (SiC)-MOSFET connected in parallel, which has been widely studied due to their high efficiency and low cost. In general, to realize the zero-voltage conduction of IGBTs, the switching timing of the Hys is usually chosen to turn on the SiC earlier or at the same instant. However, HyS will have current overcurrent stress problem in practical applications, resulting in the maximum current rating being limited. In this paper, an active drive circuit is proposed to suppress the SiC MOSFET current overshoot by extracting part of the driving current during the SiC current rise phase, so as to ensure the operational reliability of the hybrid switches. A double-pulse test platform was built to verify the proposed driver circuit under different load current conditions. The experimental results show that compared with the conventional gate driver (CGD) circuit, the Si/SiC hybrid switches with the active gate driver(AGD) circuit proposed in this paper suppresses the current overshoot of the SiC by 38.3 %, 28.4 %, and 22 % in the heavy-load, medium-load, and light-load conditions, respectively, when the drain resistance is selected to be 3 Ω. The peak current of the SiC is within the limit of the safe operating area, while the increased switching loss is within the acceptable range.

查看原文本刊更多论文

具有动态门电流调节的SiC+Si混合开关的电流超调抑制有源门驱动器

混合开关（HyS）是由大电流硅绝缘栅双极晶体管（IGBT）和小电流碳化硅-MOSFET并联而成，由于其高效率和低成本而得到了广泛的研究。一般来说，为了实现igbt的零电压导通，通常选择Hys的开关时机，使SiC更早或在同一时刻导通。然而，在实际应用中，HyS会出现电流过流应力问题，导致最大额定电流受到限制。本文提出了一种有源驱动电路，通过在SiC电流上升阶段提取部分驱动电流来抑制SiC MOSFET电流超调，从而保证混合开关的工作可靠性。搭建了双脉冲测试平台，在不同负载电流条件下对所提出的驱动电路进行了验证。实验结果表明，当漏极电阻为3 Ω时，与传统栅极驱动电路（CGD）相比，本文提出的具有有源栅极驱动电路（AGD）的Si/SiC混合开关在重载、中载和轻载条件下对SiC电流超调的抑制分别为38.3%、28.4%和22%。SiC的峰值电流在安全工作范围内，增加的开关损耗在可接受范围内。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.