Peanut-shaped manganese-doped bismuth oxide ceramics impregnated over ultrathin rGO films for the photodegradation of azo dye and drug

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-13 DOI:10.1016/j.mssp.2025.109469

Basem Al Alwan , Muhammad Aadil , Awais Khalid , Faisal Mukhtar , Mousa M. Hossin , Thamer Alomayri , Mohamed R. El-Aassar , Mazen R. Alrahili , Atef El Jery

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Abstract

In this report, manganese-doped β-bismuth oxide has been prepared by solvothermal method and impregnated onto ultrathin rGO via a wet-chemical process to prepare rGO@Mn-Bi₂O₃ composite. Mn-doping into Bi₂O₃ crystal lattice was found to reduce the band gap of the resulting material up to 2.11 eV as compared to undoped Bi₂O₃ (3.14 eV). SEM images exhibited compact peanut-like morphology for Mn-Bi₂O₃ embedded on ultrathin and flexible 2D rGO sheets. The photodegradation efficiency of rGO@Mn-Bi₂O_3, along with its other correspondents, i.e., Bi₂O₃ and Mn-Bi₂O₃, was tested against Congo red (CR) dye and diclofenac sodium (DS) pharmaceutical drug. The results showed high photocatalytic efficiency of rGO@Mn-Bi₂O₃ for CR (87.9 %) and DS (91.7 %), which was significantly greater than Mn-Bi₂O₃ (CR = 62.7 % and DS = 77.1 %) and Bi₂O₃ (CR = 45.3 % and DS = 60 %). The enhanced photodegradation ability of rGO@Mn-Bi₂O₃ is due to the synergistic impacts of Mn-doping and rGO amalgamation.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.