Effect of Interlayer on Doped Organic p–n Heterojunction Charge Generation Layers Using Impedance Spectroscopy

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Somi Park, Akeem Raji, So-Young Boo, Eun-Jeong Jang, Akpeko Gasonoo, Jaeyong Park, Sungmin Kwon, Jonghee Lee, Jae-Hyun Lee
{"title":"Effect of Interlayer on Doped Organic p–n Heterojunction Charge Generation Layers Using Impedance Spectroscopy","authors":"Somi Park, Akeem Raji, So-Young Boo, Eun-Jeong Jang, Akpeko Gasonoo, Jaeyong Park, Sungmin Kwon, Jonghee Lee, Jae-Hyun Lee","doi":"10.1002/aelm.202400609","DOIUrl":null,"url":null,"abstract":"Tandem organic light-emitting diodes (OLEDs) are two or more emitting units that are connected in series with charge generation layer(s) (CGLs). Although these devices can achieve higher efficiencies and longer operating lifetimes, the CGL is a key element that determines the lifetime and efficiency of these devices. This study investigates the charge generation and operation mechanisms in pristine and aged organic p–n heterojunction CGLs with and without an interlayer (IL) using impedance spectroscopy (IS) and equivalent circuit simulations. Current density and voltage (<i>J–V</i>) analyses show a nearly three times higher current density of the CGL devices with an IL, requiring lower operating voltage and an unchanged onset voltage after aging, demonstrating device stability. The IS and equivalent circuit simulation results reveal that the charge generation efficiency of CGL devices with an IL can be attributed to the lower energy barrier imposed by the IL at the p–n heterojunction and the stability of its molecules after electrical aging. Further investigations providing a clear understanding of the reason behind the stability and efficient operating mechanism in these devices intuitively demonstrate that IS and equivalent circuit simulations can be effectively employed for electrical stability research on multilayered organic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400609","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Tandem organic light-emitting diodes (OLEDs) are two or more emitting units that are connected in series with charge generation layer(s) (CGLs). Although these devices can achieve higher efficiencies and longer operating lifetimes, the CGL is a key element that determines the lifetime and efficiency of these devices. This study investigates the charge generation and operation mechanisms in pristine and aged organic p–n heterojunction CGLs with and without an interlayer (IL) using impedance spectroscopy (IS) and equivalent circuit simulations. Current density and voltage (J–V) analyses show a nearly three times higher current density of the CGL devices with an IL, requiring lower operating voltage and an unchanged onset voltage after aging, demonstrating device stability. The IS and equivalent circuit simulation results reveal that the charge generation efficiency of CGL devices with an IL can be attributed to the lower energy barrier imposed by the IL at the p–n heterojunction and the stability of its molecules after electrical aging. Further investigations providing a clear understanding of the reason behind the stability and efficient operating mechanism in these devices intuitively demonstrate that IS and equivalent circuit simulations can be effectively employed for electrical stability research on multilayered organic devices.

Abstract Image

求助全文
约1分钟内获得全文 求助全文
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信