Interface-related VTH shift of SiC MOSFETs during constant current stress extracted from charge pumping measurements

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-11 DOI:10.1016/j.microrel.2025.115698

A. Marcuzzi , M. Avramenko , C. De Santi , P. Moens , G. Meneghesso , E. Zanoni , M. Meneghini

引用次数: 0

Abstract

This work focuses on the extraction of Threshold Voltage Shift due to interface trapping from Charge Pumping (CP) measured curves. The proposed mathematical approach analyzes the peak of the charge pumping curve, proportional to the average interface defects density, for estimating the threshold voltage shift due to interface trapping separately from the shift induced by oxide trapping. The high-frequency nature of CP measurements is therefore exploited for the detection of fast states. The analyzed devices are 4H-SiC n-channel MOSFETs and a custom, on-wafer, in-situ measurement setup is used. Under constant current gate stress, positive and negative charge trapping processes are identified; the role of a) charge trapping in the oxide and b) interface states generation is analyzed and described.

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从电荷泵送测量中提取恒定电流应力时SiC mosfet的界面相关VTH偏移

本文主要研究从电荷泵浦（CP）测量曲线中提取界面捕获引起的阈值电压偏移。提出了一种数学方法，分析电荷泵送曲线的峰值与平均界面缺陷密度成正比，以估计界面俘获引起的阈值电压偏移和氧化物俘获引起的阈值电压偏移。因此，利用CP测量的高频特性来检测快态。所分析的器件是4H-SiC n沟道mosfet，并使用了定制的片上原位测量装置。在恒流栅极应力下，确定了正电荷和负电荷捕获过程；分析和描述了a)电荷捕获在氧化物中的作用和b)界面态的产生。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.