Micrometric Co3O4/ZIF-67 with high toluene detection capability

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Fabiola C. Paciencia , Reinaldo dos S. Theodoro , Gustavo S.M. Santos , Tarcísio M. Perfecto , Diogo P. Volanti
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引用次数: 0

Abstract

Environmental monitoring has increasingly focused on detecting volatile organic compounds (VOCs), especially toluene, as these substances pose significant environmental and human health risks. Our research demonstrates the fabrication of microscale Co3O4, a p-type semiconductor material, synthesized through a two-step process combining microwave-assisted hydrothermal synthesis and subsequent calcination. Given the inherent low sensitivity and selectivity of p-type metal oxide semiconductor (MOS) sensors, we explored strategies to enhance the selectivity and sensitivity of p-type MOS under diverse sensing conditions, including varying temperatures and humid environments. The VOC detection performance of Co3O4 was improved by adding a metal-organic framework, ZIF-67. The Co3O4/ZIF-67 composite was prepared using the reflux method. The sensor demonstrated enhanced detection capabilities compared to pure Co3O4, as evidenced by the Co3O4/ZIF-67 composite exhibiting the highest response (61.22) to 100 ppm of toluene at 250 °C, with a high selectivity index (5.43). In contrast, the Co3O4 sensor responded 20.05 to toluene, with a relatively low selectivity index (2.86) at 250 °C. Therefore, the incorporation of ZIF-67 resulted in an enhancement of the sensor's response and selectivity. Furthermore, the sensor demonstrated satisfactory performance at various controlled relative humidities. The micro-sized Co3O4/ZIF-67 demonstrates significant potential as an effective material for low-temperature toluene detection, a crucial capability for monitoring environmental conditions and protecting human health.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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