First principles study on the electronic and optical properties of Yb and La doped diamond

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Weiyin Li , Meng Wang , Hao Feng , Ruiyong Shang , Chao Yang , Longcan Cheng , Tongli Wei
{"title":"First principles study on the electronic and optical properties of Yb and La doped diamond","authors":"Weiyin Li ,&nbsp;Meng Wang ,&nbsp;Hao Feng ,&nbsp;Ruiyong Shang ,&nbsp;Chao Yang ,&nbsp;Longcan Cheng ,&nbsp;Tongli Wei","doi":"10.1016/j.mssp.2025.109457","DOIUrl":null,"url":null,"abstract":"<div><div>The La and Yb doped diamond electronic and optical properties have been investigated through first-principles density functional theory calculations. The findings reveal that the face-centered doping of Yb and La in diamonds results in the most stable energy configurations compared to vertex doping or internal doping. The bandgap widths of these doped systems are reduced from 5.29 eV of pristine diamond to 0.92 eV for Yb and 1.89 eV for La, respectively. Both magnetic moments of La doped and pure diamond are zero, while Yb doped diamond exhibits a magnetic moment of 2.1 μ<sub>B</sub>. The static dielectric constant, optical absorption edge, static refractive index, and energy loss features of intrinsic diamond are markedly altered upon doping with La and Yb. Specifically, the static dielectric constants escalate from 4.18 to 43.8 and 71.7 for Yb and La doping, respectively. The optical absorption edges undergo a red shift, while the static refractive indices increase from 2 to 2.5 and 5.5 for La and Yb doping, respectively. Additionally, the peak positions of the energy loss shift from 7.5 eV to 1.8 eV and 3.0 eV for La and Yb doping, respectively. These insights lay a theoretical foundation for the broad applications of diamonds in various fields.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109457"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125001945","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The La and Yb doped diamond electronic and optical properties have been investigated through first-principles density functional theory calculations. The findings reveal that the face-centered doping of Yb and La in diamonds results in the most stable energy configurations compared to vertex doping or internal doping. The bandgap widths of these doped systems are reduced from 5.29 eV of pristine diamond to 0.92 eV for Yb and 1.89 eV for La, respectively. Both magnetic moments of La doped and pure diamond are zero, while Yb doped diamond exhibits a magnetic moment of 2.1 μB. The static dielectric constant, optical absorption edge, static refractive index, and energy loss features of intrinsic diamond are markedly altered upon doping with La and Yb. Specifically, the static dielectric constants escalate from 4.18 to 43.8 and 71.7 for Yb and La doping, respectively. The optical absorption edges undergo a red shift, while the static refractive indices increase from 2 to 2.5 and 5.5 for La and Yb doping, respectively. Additionally, the peak positions of the energy loss shift from 7.5 eV to 1.8 eV and 3.0 eV for La and Yb doping, respectively. These insights lay a theoretical foundation for the broad applications of diamonds in various fields.
求助全文
约1分钟内获得全文 求助全文
来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信