Surface modification of MoS2 and WSe2 with TiOx nanoparticles for doping control

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-11 DOI:10.1016/j.mssp.2025.109464

Yoobin Oh, Woong Choi

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引用次数: 0

Abstract

This study explores the effect of TiO_x nanoparticles on the doping behavior in multilayer n-type MoS₂ and p-type WSe₂ crystals. The deposition of a 1-nm-thick Ti via electron-beam evaporation under high vacuum resulted in the formation of oxygen-rich TiO_x nanoparticles, indicated through scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. X-ray photoelectron spectroscopy and Raman analyses revealed suppressed n-type doping in MoS₂ and enhanced p-type doping in WSe₂. Transistor characteristics showed a positive threshold voltage shift and altered on-current, consistent with the observed doping trends. The observed p-type doping behavior was further supported by the increased work function values measured using Kelvin probe force microscopy. These results demonstrate that the TiO_x nanoparticles effectively modulate the doping characteristics of MoS₂ and WSe₂, providing a simple and effective approach for doping control in devices based on two-dimensional materials.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.