RGO–MoS₂ Nano-Junction Aggregates Based Flexible Hg (II) Ion Sensors

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Santanab Majumder;Avik Sett;Dipak Kumar Goswami;Tarun Kanti Bhattacharyya
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引用次数: 0

Abstract

In this study, we demonstrated the fabrication of reduced graphene oxide reduced graphene oxide (RGO)–molybdenum disulfide (MoS2) nano-junction aggregates on flexible interdigitated electrodes (IDEs) as Hg (II) ion sensors for water quality monitoring. The as-fabricated devices showed selective sensitivity toward varying concentrations (from 3 to 12 ppb) of Hg (II) ions in solution, offering a maximum response of ~97% for 12 ppb Hg (II) ions (response time ~4 s) and a sensitivity of 2.2%/ppb (limit of detection: 1 ppb). Bending stress effects on the device were tested by subjecting it to increasing bending angles (15°–90°). They were minimally responsive (maximum variation ~2%) toward bending supported by a fitting model. The sensing performance for the device was explained via a junction-dependent mechanism with a model for supporting the same. Finally, the overall device response was determined analytically by examining the impact of the n, p, and junction regions. The analytical model’s prediction of 96% at 12 ppb was almost similar to the experimental measurement (97%). The analytical model predicted a significant response dependence on the contribution of the n-type (MoS2) and the RGO-MoS2 (pn) junction. The p-type region was less responsive toward the overall sensing performance, which may be attributed to lower hole mobility than that of electrons. The device was repeatable and stable for up to 40 days with ~7% variation in response. Hence, the proposed sensor provides a simple solution for selective Hg (II) ion sensing, challenging its complex conventional counterparts.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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