Interfacial engineering to boost photocatalytic hydrogen evolution via synergistic Z-scheme heterojunction in novel n-type metal free NiCoV-LDH/g-C3N4 composite

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Muhammad Usman , Akawat Sirisuk
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引用次数: 0

Abstract

Fabrication of low cost, highly effective, noble metal free, thermally and chemically stable photocatalyst and alkaline water electrocatalyst with the wide pH range is posing a significant challenge in the hydrogen evolution reaction from water splitting to resolve the worldwide energy issues. In this study we have designed a novel n-type 2D semiconductor NiCoV-LDH/g-C3N4 (LCN) composite with easy one-step hydrothermal method. Morphological results proved that in situ NiCoV-LDH lamellar sheets were deposited uniformly on g-C3N4 support, resulting in larger electrochemical active surface area and enhanced photo/electrocatalytic hydrogen evolution rate (HER). Furthermore, the LCN with 15 % loading of g-C3N4 (LCN-15) composite exhibited the highest photocatalytic hydrogen evolution rate of 1673.4 μmolg1, representing a 27.93-fold enhancement compared to that of bare CN at 59.9 μmolg1. The improved photocatalytic activity of LCN-15 composite was attributed to (1) enhanced surface area with a large number of active sites, (2) slow formation of NiCoV-LDH precipitates leading to the fabrication of successful composite material with the g-C3N4, and (3) development of Z-scheme heterojunction, which effectively reduced the recombination rate of photogenerated charge carriers. Furthermore, the electrocatalytic HER performance for LCN-15 composite achieved a current density of −135.86 mAcm2, which was about 10 times greater than that for bare CN. Moreover, LCN-15 composite exhibited excellent stability during repeated usage for both photocatalytic activities. Thus, this study presented a successful development of NiCoV-LDH/g-C3N4 (LCN) composite structures for enhanced photo/electrocatalytic hydrogen evolution.

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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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