Ghulam M. Mustafa , Bisma Younas , Muhammad Waseem , Ateeq-ur-Rehman , N.A. Noor , Khalid M. Elhindi , Sohail Mumtaz
{"title":"Investigation of optoelectronic and thermoelectric characteristics of Tl2Os(Cl/Br)6 double perovskites for renewable energy applications","authors":"Ghulam M. Mustafa , Bisma Younas , Muhammad Waseem , Ateeq-ur-Rehman , N.A. Noor , Khalid M. Elhindi , Sohail Mumtaz","doi":"10.1016/j.mssp.2025.109420","DOIUrl":null,"url":null,"abstract":"<div><div>Half-metallicity is a promising feature for burgeoning spintronic devices, prompting investigators to explore suitable materials for advancing existing technology. This study delves into the impact of Os d-electrons on the half-metallic ferromagnetic behavior of double perovskites with composition Tl<sub>2</sub>Os (Cl/Br)<sub>6</sub>, aiming to elucidate their potential for spintronic devices. The structural, electronic, magnetic, and transport responses are comprehensively investigated utilizing the WIEN2k package. The incorporation of Br at Cl site causes the expansion of unit cell from 9.80 to 10.37 Å, reduction of bulk modulus from 50.27 to 41.38 GPa, and formation energy of −9.33 and −7.89 eV for Tl<sub>2</sub>OsCl<sub>6</sub> and Tl<sub>2</sub>OsBr<sub>6</sub>, respectively. The high Curie temperature of 552 and 518 K witness their above-room-temperature viability for device fabrication. Insights into half-metallicity are established from band structures and DOS analysis. The phenomenon of half-metallic ferromagnetism is elucidated through exchange constants and a double exchange mechanism. Furthermore, various thermoelectric performance parameters, including electrical conductivity (σ), thermal conductivity due to electron (κ<sub>e</sub>), the seeback coefficient (S), susceptibility (χ), power factor (PF), and figure of merit (ZT) are meticulously calculated. This comprehensive exploration sheds light on the potential of Tl<sub>2</sub>Os(Cl/Br)<sub>6</sub> for spintronic applications, underscoring their utilization in emerging technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109420"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S136980012500157X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Half-metallicity is a promising feature for burgeoning spintronic devices, prompting investigators to explore suitable materials for advancing existing technology. This study delves into the impact of Os d-electrons on the half-metallic ferromagnetic behavior of double perovskites with composition Tl2Os (Cl/Br)6, aiming to elucidate their potential for spintronic devices. The structural, electronic, magnetic, and transport responses are comprehensively investigated utilizing the WIEN2k package. The incorporation of Br at Cl site causes the expansion of unit cell from 9.80 to 10.37 Å, reduction of bulk modulus from 50.27 to 41.38 GPa, and formation energy of −9.33 and −7.89 eV for Tl2OsCl6 and Tl2OsBr6, respectively. The high Curie temperature of 552 and 518 K witness their above-room-temperature viability for device fabrication. Insights into half-metallicity are established from band structures and DOS analysis. The phenomenon of half-metallic ferromagnetism is elucidated through exchange constants and a double exchange mechanism. Furthermore, various thermoelectric performance parameters, including electrical conductivity (σ), thermal conductivity due to electron (κe), the seeback coefficient (S), susceptibility (χ), power factor (PF), and figure of merit (ZT) are meticulously calculated. This comprehensive exploration sheds light on the potential of Tl2Os(Cl/Br)6 for spintronic applications, underscoring their utilization in emerging technologies.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.