Phase transformation from α-Bi2O3 needles to petal-shaped β-Bi2O3 nanoparticles via ball milling for boosted photocatalytic activity of rhodamine B dye

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Divya Janardhana, Shivaramu Nagarasanakote Jayaramu, Harris Richard Anthony, Hendrik C. Swart
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引用次数: 0

Abstract

Tetragonal bismuth oxide (β-Bi2O3) is regarded as a promising heterogeneous photocatalyst for the degradation of organic dye molecules in polluted water, owing to its high surface area, wide absorption band edge, effective exciton separation, and abundant oxygen vacancies. Here, we propose a phase transformation from needle-shaped monoclinic (α) Bi2O3 to petal-shaped β-Bi2O3 nanoparticles through a ball milling process. The α-Bi2O3 and β-Bi2O3 materials were extensively characterized through various techniques to investigate their structural, morphological, surface chemicals, and optical properties. X-ray powder diffraction (XRPD), high-resolution transmission electron microscopy (HR-TEM), and selected-area electron diffraction (SAED) patterns reveal that the ball-milled α-Bi2O3 has a polycrystalline structure and identify the (201) and (101) planes, which correspond to the β-Bi2O3 phase. The Tauc plot yields band gaps of 2.9 eV for α-Bi2O3 and 2.5 eV for β-Bi2O3. Furthermore, β-Bi2O3 exhibited a broad absorption band from UV to 540 nm. This finding suggests that β-Bi2O3 has an enhanced ability to absorb UV–visible light, thereby improving photon utilization efficiency. The petal-shaped β-Bi2O3 nanoparticles demonstrated improved UV–visible light absorption, enhanced charge carrier separation, and superior photocatalytic properties. The petal-shaped β-Bi2O3 nanoparticles exhibited excellent photocatalytic activity for the degradation of Rhodamine B in aqueous phase under UV–visible light and solar simulator irradiation. Notably, the β-Bi2O3 system achieved 97 % degradation in 75 min under UV–visible light and 91 % degradation in 150 min under the solar simulator. Both catalytic reactions followed pseudo-first-order kinetics, with kinetic constants (k) registering at 8.7 ± 0.6 × 10−3 and 48.1 ± 4.7 × 10−3 min−1 for Rhodamine B (RhB) under UV–vis light. Additionally, by expanding the number of reactive sites and oxygen vacancies, the catalyst's large surface area boosted electron-hole separation and its photocatalytic performance.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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