P.-E. Vidal , S. Baffreau , G. Viné , A. Gopishetti , T.L. Long
{"title":"Wire bonding failure characterization of an IGBT based power module through impedance analysis","authors":"P.-E. Vidal , S. Baffreau , G. Viné , A. Gopishetti , T.L. Long","doi":"10.1016/j.microrel.2025.115669","DOIUrl":null,"url":null,"abstract":"<div><div>This study deals with the development of a wide-frequency-band characterization for failure analysis of power modules, focusing on a specific IGBT packaging. It is highlighted that different characteristics of the IGBT and the packaging can be distinguished depending on the frequency band analyzed, enabling the detection of potential failure modes. Particularly, for the power bond-wire lift-off mechanism, the paper emphasizes the importance of considering high-frequency analysis above 200 MHz. It is enabled through the definition of a failure indicator, demonstrating the ability to highlight partial failures as well as to localize them.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115669"},"PeriodicalIF":1.6000,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425000824","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study deals with the development of a wide-frequency-band characterization for failure analysis of power modules, focusing on a specific IGBT packaging. It is highlighted that different characteristics of the IGBT and the packaging can be distinguished depending on the frequency band analyzed, enabling the detection of potential failure modes. Particularly, for the power bond-wire lift-off mechanism, the paper emphasizes the importance of considering high-frequency analysis above 200 MHz. It is enabled through the definition of a failure indicator, demonstrating the ability to highlight partial failures as well as to localize them.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.