Improved 2D charge carrier quantification workflow for scanning spreading resistance microscopy

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-09 DOI:10.1016/j.microrel.2025.115646

T. Adlmaier , S. Doering , B. Binder , D.K. Simon , T. Mikolajick , L.M. Eng

引用次数: 0

Abstract

In this study, we introduce an extended sample preparation workflow to enhance the two-dimensional (2D) charge carrier quantification via scanning spreading resistance microscopy (SSRM) for failure analysis and electrical device characterization. This is achieved by means of embedding a novel partial-staircase doping reference sample close to the area of interest prior to cross-sectioning the device. We subsequently demonstrate that this approach enhances the quantification reliability while reducing analysis time.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.