Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-09 DOI:10.1016/j.microrel.2025.115657

Dong Xie , Patrick Heimler , Roman Boldyrjew-Mast , Mohamed Alaluss , Sven Thiele , Josef Lutz , Thomas Basler

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引用次数: 0

Abstract

The evaluation of the bias temperature instability (BTI) or gate-switching instability (GSI) of the threshold voltage (V_th) is important for analyzing the stability of R_DS,on and virtual temperature calculation by the V_SD-T technique in the power cycling test (PCT). But before this, the V_th hysteresis should be first analyzed to choose the suitable V_th measurement parameters and eliminate the hysteresis effect on the BTI/GSI read-out. This paper investigates the V_th hysteresis of SiC MOSFETs under various measurement conditions. The differences in V_th hysteresis between different technologies are significant. Relevant measured and analytical results can provide the practical guidance for the BTI/GSI evaluation and the PCT for different types of SiC MOSFETs.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.