Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-07 DOI:10.1016/j.microrel.2025.115649

Riccardo Fraccaroli , Manuel Fregolent , Mirco Boito , Carlo De Santi , Eleonora Canato , Isabella Rossetto , Maria Eloisa Castagna , Cristina Miccoli , Alfio Russo , Ferdinando Iucolano , Alessio Pirani , Giansalvo Pizzo , Gaudenzio Meneghesso , Enrico Zanoni , Matteo Meneghini

引用次数: 0

Abstract

We demonstrate the existence of two different degradation mechanisms for 100 V GaN transistors submitted to off-state stress. When the devices are stressed in strong pinch-off conditions, a high electric field falls on the dielectric between the source field plate and the channel, and a time dependent dielectric breakdown is observed. On the other hand, for weaker pinch-off, hot electrons trapping at the passivation surface can lower the electric field, leading to longer TTF. A second degradation mode is also observed, consisting in the gradual increase in off-state current, ascribed to positive charge trapping at defects spots.

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非状态下100v GaN晶体管双重退化的证据：从介电失效到亚阈值电流增加

我们证明存在两种不同的退化机制的100 V氮化镓晶体管提交的状态应力。当器件在强钳断条件下受到应力时，一个高电场落在源场板和通道之间的电介质上，并且观察到一个随时间变化的电介质击穿。另一方面，对于较弱的掐断，在钝化表面捕获的热电子可以降低电场，从而导致更长的TTF。第二种退化模式也被观察到，包括逐渐增加的非状态电流，归因于正电荷捕获在缺陷点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.