Degradation prediction of IGBT module based on CNN-LSTM network

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Liangjun Bai, Meng Huang, Shangzhi Pan, Kang Li, Xiaoming Zha
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引用次数: 0

Abstract

The reliability of insulated gate bipolar transistor (IGBT) directly affects the safe and stable operation of power electronic system. Based on the IGBT accelerated aging open data set provided by NASA PCoE, the peak collector-emitter voltage during IGBT shutdown is selected as the failure characteristic parameter. Convolutional neural network and long short-term memory network (CNN-LSTM) model is used to predict IGBT failure precursor parameters and estimate the degradation behavior of IGBT modules in this paper. The sliding window method is employed to construct input and output data. When the window width is 3, the prediction model works best. By running the proposed model many times, the average values of MAPE, MAE, MSE and RMSE of the CNN-LSTM network proposed in this paper are 0.0038,0.0468,0.0059,0.0600, which have higher accuracy than other networks. At the same time, the four indicators of the CNN-LSTM model are the most stable and the prediction credibility is higher through the box plot analysis. This prediction method provides a new idea for IGBT degradation behavior prediction.
基于CNN-LSTM网络的IGBT模块退化预测
绝缘栅双极晶体管(IGBT)的可靠性直接影响电力电子系统的安全稳定运行。基于NASA PCoE提供的IGBT加速老化开放数据集,选择IGBT关断时集电极-发射极峰值电压作为失效特征参数。采用卷积神经网络和长短期记忆网络(CNN-LSTM)模型预测IGBT故障前兆参数,估计IGBT模块的退化行为。采用滑动窗口法构造输入输出数据。当窗宽为3时,预测模型效果最佳。通过多次运行所提出的模型,本文提出的CNN-LSTM网络的MAPE、MAE、MSE和RMSE的平均值分别为0.0038、0.0468、0.0059、0.0600,精度高于其他网络。同时,通过箱形图分析,CNN-LSTM模型的四项指标最稳定,预测可信度较高。该预测方法为IGBT降解行为预测提供了新的思路。
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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