Thermal ageing monitoring in CuAl intermetallic joints through electrical resistance drift: Comparative study of lifetime potential in pure and alloyed copper wires

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-07 DOI:10.1016/j.microrel.2025.115660

R. Carluccio , A. Mancaleoni , G. Losacco , R. Villa , A. Serafini , L. Guarino , D. Dellasega

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引用次数: 0

Abstract

Copper has pervasively replaced gold as preferred wire bonding material in Integrated Circuits (IC) plastic packaging. Different types of wires are available today in the market, with specific annealing treatments, coating and doping solutions aimed at optimizing bondability and reliability performances of the joints. In this study, the electrical resistance drift of packaged daisy chains has been analyzed to compare the lifetime potential of pure and alloyed copper wires under accelerated High Temperature Storage (HTS). Two aluminum-based bond-pads with different composition and thickness have been included in the experimental matrix. The results obtained through this statistically efficient and non-destructive methodology have been correlated with more “classical” readout data based on wire pull test, polished cross sections for Inter-Metallic Compounds (IMC) thickness measurement and TEM lamellas for phases stoichiometry characterization. Comparative analysis of the drift plots has pointed out a specific electrical signature for the consumption of the aluminum source under the IMC joint, confirmed by a Finite Element Method (FEM) simulation. A systematic delay in the IMC evolution has been demonstrated in all the samples with alloyed copper wires, correlating their lower ohmic drift with a lower thickness and a different composition of the IMC phases growing during HTS.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.