{"title":"Evidence of resistive switching in SiNx thin films for MEMS capacitors: The role of metal contacts","authors":"J. Theocharis, S. Gardelis, G. Papaioannou","doi":"10.1016/j.microrel.2025.115661","DOIUrl":null,"url":null,"abstract":"<div><div>The impact of metal contacts on the electrical properties of SiN dielectric film in MEMS capacitors is investigated. The investigation is performed employing MIM and MEMS capacitors with Au and Ni contacts. A resistive switching like behaviour is monitored in the case of Ni contacts. This behaviour is attributed to the presence of deep traps in SiN and the effect of different metal contacts as revealed from Thermally Stimulated Depolarization Current (TSDC) assessment. Specifically, TSDC showed that the resistive switching is a contact/interface dominated effect.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115661"},"PeriodicalIF":1.6000,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425000745","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The impact of metal contacts on the electrical properties of SiN dielectric film in MEMS capacitors is investigated. The investigation is performed employing MIM and MEMS capacitors with Au and Ni contacts. A resistive switching like behaviour is monitored in the case of Ni contacts. This behaviour is attributed to the presence of deep traps in SiN and the effect of different metal contacts as revealed from Thermally Stimulated Depolarization Current (TSDC) assessment. Specifically, TSDC showed that the resistive switching is a contact/interface dominated effect.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.