Comprehensive analysis of the synthesis and characterizations of Cr-substituted Cd-Cu ferrite: Insights from Mössbauer and impedance spectroscopy

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
R.E. El Shater , A.W. Awad , H.H. El-Bahnasawy , T.M. Meaz , E.H. El-Ghazzawy
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引用次数: 0

Abstract

This work explores the influence of chromium ion substitution on the dielectric characteristics of Cd0.5Cu0.5CrxFe2-xO4 magnetic ferrite prepared by the coprecipitation method and sintered at 1000 °C. X-ray diffraction (XRD) and Rietveld refinement analysis ensured the purity and crystallinity of the formed spinel structure. The ionic radius of cations affects the cation distribution, particularly the occupation of large cadmium ions at the tetrahedral sites. The lattice parameter, oxygen position parameter, and bond length decrease by adding Cr3+ ions, while the vibrational frequency and force constant increase. This leads to the reinforcement of interatomic bonds and increases the elastic moduli and Debye temperature. Therefore, chromium-doped ferrites are relatively rigid compared to the others. Mössbauer spectroscopy detected the hyperfine magnetic parameters, including isomer shift (IS), quadrupole splitting (Qs), magnetic field strength, and the relative area between tetrahedral and octahedral sites. The two well-defined sextets represent the ferromagnetic behavior of the samples x = 0.1, 0.2, and 0.4, while the sample Cr 0.8 exhibits a doublet type, demonstrating superparamagnetic behavior. All the dielectric parameters decrease by adding Cr ions. Impedance spectroscopy provides valuable information about the resistances and capacitances of the grain and grain boundaries. The equivalent circuit of the samples consists of two series RC parallel circuits according to the semicircles obtained from the Nyquist plot. The calculated activation energy and relaxation time further explain the nature of charge carriers' movement within the material. These findings indicate that these samples are good candidates in advanced electronic and magnetic devices and high-frequency applications.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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