S. Perrin , V. Della Marca , T. Kempf , M. Bocquet , L. Welter , J.M. Moragues , A. Regnier , J.M. Portal
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引用次数: 0
Abstract
In this paper, a machine learning method is proposed implementing the Principal Component Analysis to study the statistical EEPROM endurance degradation. This technique is firstly applied to an UV irradiated memory array. Then, the Density Based Spatial Clustering of Applications with Noise and the Gaussian Mixture Model are presented to extract the minority population of cells. The reliability test study demonstrated the ability of the proposed technique to correlate electrical parameters to forecast the quality and performance of a memory array. Compared to the classical threshold voltage (Vth) analysis, this method is more effective for predicting which population will experience greater degradation.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.