A screening test of GaN-HEMTs for improvement of breakdown voltage uniformity

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-05 DOI:10.1016/j.microrel.2025.115643

Wataru Saito, Shin-ichi Nishizawa

引用次数: 0

Abstract

As a screening test recipe, burst unclamped inductive switching (UIS) test is proposed to improve breakdown voltage uniformity. One of the critical disadvantages of GaN-HEMTs is its lack of the UIS withstanding capability, because there is no removal structure of holes, which generated by the avalanche breakdown. Hence, at the screening in the mass-production, measurement of the avalanche breakdown voltage cannot be employed to reject low breakdown voltage devices due to catastrophic failure, and conventional static drain leakage current measurements are insufficient. This paper reports a screening test of GaN-HEMTs by repetitive overvoltage stress using burst UIS test. The experimental results show the repetitive overvoltage stress was needed to reject outliers with low breakdown voltage and optimum test current avoided to generate new outliers.

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gan - hemt改善击穿电压均匀性的筛选试验

为了提高击穿电压的均匀性，提出了一种筛选试验方法——突发无箝位电感开关试验。gan - hemt的一个关键缺点是它缺乏抗UIS能力，因为它没有雪崩击穿产生的孔的去除结构。因此，在批量生产的筛选中，雪崩击穿电压的测量不能用于检测因灾难性失效而导致的低击穿电压器件，常规的静态漏极漏电流测量也存在不足。本文报道了一种利用突发usis试验进行重复过电压应力筛选gan - hemt的方法。实验结果表明，为了剔除低击穿电压的异常值，需要重复的过电压应力，并避免最佳测试电流来产生新的异常值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.